A METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method of manufacturing a semiconductor device is provided to minimize the large size of a memory cell size by forming an SRAM memory cell with fourth MISFET and two bell type MSFET. CONSTITUTION: A first film is formed on a conductive film which is formed in the main surface of a semiconductor substrate(1). The first film is patterned to form first patterns. Second patterns are formed in a second direction. A conductive film is patterned to form the gate pattern for the gate electrode(7A,7B) of MISFETs. A memory cell comprises a first drive MISFET(DR1), a second driver MISFET(DR2), a first electrical transmission MISFET(TR1), and a second electrical transmission MISFET. The first drive MISFET and the first electrical transmission MISFET are cross-combined with the second driver MISFET and the second electrical transmission MISFET.