发明名称 Phase change memory structures and methods
摘要 Methods, devices, and systems associated with phase change memory structures are described herein. One or more embodiments of the present disclosure can reduce thermal crosstalk associated with phase change memory cells, which can provide various benefits including improved data reliability and retention and decreased read and/or write times, among various other benefits. One or more embodiments can reduce the number of processing steps associated with providing local interconnects to phase change memory arrays.
申请公布号 US7754522(B2) 申请公布日期 2010.07.13
申请号 US20080186992 申请日期 2008.08.06
申请人 MICRON TECHNOLOGY, INC. 发明人 LIU JUN
分类号 H01L21/00 主分类号 H01L21/00
代理机构 代理人
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