| 摘要 |
This aims to provide a method for manufacturing a laminated substrate having a thin film of SiGe(0 < x < 1), into which a higher tensile strain than that of the prior art is introduced. The manufacturing method comprises a step for preparing at least a donor wafer and a handle wafer having a lower thermal expansion coefficient than that of the donor wafer, a step for implanting the donor wafer with hydrogen ions and/or rare gas ions, to form an ion-implanted layer, a step for subjecting the laminated face of at least one of the donor wafer and the handle wafer to a plasma-activating treatment, a step for laminating the donor wafer and the handle wafer, a step of applying mechanical shocks to the ion-implanted layer of the donor wafer, to peel the ion-implanted layer, a step for subjecting the peeled face of the donor wafer to a surface treatment, and a step for causing the thin film of SiGe(0 < x < 1) to grow epitaxially on the peeled face, to form the distorted thin film of SiGe(0 < x < 1) on the applied wafer.
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