| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a patterning process in which pattern densities of some regions are doubled by a double patterning technology while patterns having different widths are simultaneously formed, and to provide a semiconductor device having a structure to which the process is easily applicable. <P>SOLUTION: The semiconductor device includes: a plurality of conductive lines each including first line portions 201A, 202A, ..., 232A extending in a first direction on a substrate and second line portions 202B, 204B, ..., 231B extending from one ends of the first line portions in a second direction different from the first direction; a plurality of contact pads each of which is connected with one end of respective second line portion of the plurality of conductive lines into one body; and a plurality of dummy conductive lines each including a first dummy portion extending from partial selected contact pads out of the plurality of contact pads parallel to the corresponding second line portion in the second direction. <P>COPYRIGHT: (C)2010,JPO&INPIT |
