| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a plasma treatment device which easily forms high-density plasma having a low plasma potential and is further stable. <P>SOLUTION: The plasma treatment device includes a mounting table 110 arranged in a treatment chamber 102 and mounting a wafer, a gas supply part 120 for introducing treatment gas in the treatment chamber, an exhaust part 130 for exhausting and depressurizing the treatment chamber, a flat high-frequency antenna 140 arranged through a plate-like dielectric body 104 to face the mounting table, a shield member 160 arranged to cover the high-frequency antenna, and a high-frequency power supply 150 for applying a high frequency for generating inductively coupled plasma between the mounting table and plate-like dielectric body on the high-frequency antenna. The high-frequency antenna is formed of antenna elements 142 of which both ends are opened and which are grounded at a midpoint or its periphery and resonate at a half wavelength of the high-frequency from the high-frequency power supply. <P>COPYRIGHT: (C)2010,JPO&INPIT |
