发明名称 |
APPARATUS AND METHOD FOR WASHING POLYCRYSTALLINE SILICON |
摘要 |
PROBLEM TO BE SOLVED: To provide an apparatus for washing polycrystalline silicon, whereby high-quality polycrystalline silicon diminished impurities and spots can be prepared. SOLUTION: The apparatus for washing polycrystalline silicon by sequentially immersing polycrystalline silicon S into a plurality of acid baths 2-6 each filled with an acid, is disclosed. Wherein the liquid temperatures of the acid baths 2-6 are set as the followings: a liquid temperature of a later acid bath in sequence is equal to or lower than that of the adjacent former acid bath and the liquid temperature of the sequentially last acid bath 6 is lower than that of the first acid bath 2; and each of the acid baths 2-6 is equipped with a temperature controlling means 18 to keep each of the liquid temperatures at a constant level. COPYRIGHT: (C)2010,JPO&INPIT |
申请公布号 |
JP2010150130(A) |
申请公布日期 |
2010.07.08 |
申请号 |
JP20090270239 |
申请日期 |
2009.11.27 |
申请人 |
MITSUBISHI MATERIALS CORP |
发明人 |
SAKAI KAZUHIRO;ATSUMI TETSUYA;MIYATA YUKIKAZU |
分类号 |
C01B33/037;B08B3/08;C30B15/00;C30B29/06 |
主分类号 |
C01B33/037 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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