发明名称 APPARATUS AND METHOD FOR WASHING POLYCRYSTALLINE SILICON
摘要 PROBLEM TO BE SOLVED: To provide an apparatus for washing polycrystalline silicon, whereby high-quality polycrystalline silicon diminished impurities and spots can be prepared. SOLUTION: The apparatus for washing polycrystalline silicon by sequentially immersing polycrystalline silicon S into a plurality of acid baths 2-6 each filled with an acid, is disclosed. Wherein the liquid temperatures of the acid baths 2-6 are set as the followings: a liquid temperature of a later acid bath in sequence is equal to or lower than that of the adjacent former acid bath and the liquid temperature of the sequentially last acid bath 6 is lower than that of the first acid bath 2; and each of the acid baths 2-6 is equipped with a temperature controlling means 18 to keep each of the liquid temperatures at a constant level. COPYRIGHT: (C)2010,JPO&INPIT
申请公布号 JP2010150130(A) 申请公布日期 2010.07.08
申请号 JP20090270239 申请日期 2009.11.27
申请人 MITSUBISHI MATERIALS CORP 发明人 SAKAI KAZUHIRO;ATSUMI TETSUYA;MIYATA YUKIKAZU
分类号 C01B33/037;B08B3/08;C30B15/00;C30B29/06 主分类号 C01B33/037
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