| 摘要 |
PURPOSE: A method for manufacturing a semiconductor device is provided to prevent an undercut on an STI by removing a device isolation layer with a wet etching process and VPC(Vapor Phase Cleaning). CONSTITUTION: A pad oxide film and an anti oxidation layer(106) are successively formed on a semiconductor substrate. A trench is formed on the part of a semiconductor substrate. A first insulation layer is formed along the inner interface of the trench. A stress buffer layer(110) and a second insulation layer(112) are successively formed on the resultant. An STI is formed in a trench by planarizing a second insulation layer so that the anti oxidation layer with a preset thickness remains. The anti oxidation layer is secondly removed by etching the poly silicon layer and the remaining anti-oxidation layer.
|
