| 摘要 |
PURPOSE: A method for forming a via hole is provided to improve a yield by removing polymers deposited on an etch stop layer or the inner wall of a via hole through an O2 process. CONSTITUTION: An etch stop layer and an interlayer insulation layer are successively formed on a semiconductor substrate(S200). The via hole is formed by etching the interlayer insulation layer through an ion etching process(S202). The polymer deposited on the etching stop layer and the via hole is removed by an O2 plasma process in a reactive ion etching process(S204). The O2 gas is supplied to a chamber for a preset time to stabilize the chamber(S206).
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