| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor device and a substrate processing apparatus capable of forming an insulating film in which impurity concentration of a carbon, hydrogen, nitrogen, chlorine, etc. is extremely low. <P>SOLUTION: The method for manufacturing the semiconductor device includes a process for forming an oxide film with a predetermined film thickness on a substrate by alternately repeating a process for forming a predetermined element-containing layer on the substrate by supplying material gas containing a predetermined element into a processing vessel accommodating the substrate and a process for modifying the predetermined element-containing layer into an oxide layer by supplying oxygen-containing gas and hydrogen-containing gas into the processing vessel set below atmospheric pressure, wherein the oxygen-containing gas is oxygen gas or ozone gas, the hydrogen-containing gas is hydrogen gas or deuterium gas, and in the process for forming the oxide film, the temperature of the substrate is 400 to 700°C. <P>COPYRIGHT: (C)2010,JPO&INPIT</p> |
