发明名称 Method of Manufacturing Semiconductor Device and Semiconductor Manufacturing Apparatus
摘要 A cause of deteriorating the hydrogen termination on the surface of a wafer is found to be water adsorbed on the surface. By exposing the wafer to an inert gas atmosphere containing an H2 gas so as to suppress the oxidation reaction due to the water, it is possible to improve the hydrogen termination on the wafer surface.
申请公布号 US2010173477(A1) 申请公布日期 2010.07.08
申请号 US20050991908 申请日期 2005.09.13
申请人 TADAHIRO OHMI 发明人 OHMI TADAHIRO;TERAMOTO AKINOBU;AKAHORI HIROSHI
分类号 H01L21/30;B05C9/06;B05C9/12;B05C11/00;B08B3/00;B08B7/04 主分类号 H01L21/30
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