| 摘要 |
<p>PURPOSE: A fine pattern forming method of the semiconductor device using patterning among 4 does not apply the spacer patterning to one partition pattern duplication. The solid of pattern and secures the uniformity of the space. CONSTITUTION: A first party layer is formed on the substrate(20). The lithographically processing about said the first party layer is enforced and the first party pattern(23B) is formed. The oxidation process is enforced and the first sacrificing layer spacer(29A) is formed in said the first party the pattern surface. The second sacrificing layer spacer is evaporated according to the surface of whole structure in which the first sacrificing layer spacer is formed.</p> |
