| 摘要 |
PURPOSE: A method for manufacturing an image sensor is provided to perform a wet-etch process without attack to a desired inter insulating layer by using a poly film. CONSTITUTION: A substrate(100) including a pixel region and a peripheral region is prepared. A light sensing unit is formed in the pixel region. An interlayer dielectric layer(120) and a wiring(130) are formed on the substrate in which the light sensing unit is formed. A hard mask pattern(140a) is formed on the interlayer dielectric layer and exposes the interlayer to the outside. The trench etching process is processed through a wet etching of the interlayer dielectric layer on the pixel region. The hard mask pattern is removed.
|
