| 摘要 |
PURPOSE: A manufacturing method for an image sensor is provided to improve the sensitivity of a CMOS image sensor by effectively removing defects generated in ion doping for forming a photo diode. CONSTITUTION: A first photo diode(114) using ion doping is formed in a first epi layer(110). The formation area of the first photo diode is subjected to first laser annealing. A second epi layer(116) is formed on the first epi layer with the first photo diode formed. A second photo diode(122) using ion doping is formed in the second epi layer. The formation area of the second photo diode is subjected to second laser annealing. A third epi layer(126) is formed on the second epi layer with the second photo diode formed. A third photo diode(130) using ion doping is formed in the third epi layer.
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