发明名称 |
LASER ANNEALING APPARATUS AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD |
摘要 |
This invention is intended to provide a laser annealing method by employing a laser annealer lower in running cost so as to deal with a large-sized substrate, for preventing or decreasing the generation of a concentric pattern and to provide a semiconductor device manufacturing method including a step using the laser annealing method. While moving a substrate at a constant rate between 20 and 200 cm/s, a laser beam is radiated aslant to a semiconductor film on a surface of the semiconductor substrate. Therefore, it is possible to radiate a uniform laser beam to even a semiconductor film on a large-sized substrate and to thereby manufacture a semiconductor device for which the generation of a concentric pattern is prevented or decreased. By condensing a plurality of laser beams into one flux, it is possible to prevent or decrease the generation of a concentric pattern and to thereby improve the reliability of the semiconductor device.
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申请公布号 |
US2010173480(A1) |
申请公布日期 |
2010.07.08 |
申请号 |
US20090494416 |
申请日期 |
2009.06.30 |
申请人 |
SEMICONDUCTOR ENERGY LABORATORY CO., LTD. |
发明人 |
YAMAZAKI SHUNPEI;TANAKA KOICHIRO;HIROKI MASAAKI |
分类号 |
H01L21/268;B23K26/08;C21D1/34;H01L21/20;H01L21/314 |
主分类号 |
H01L21/268 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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