JUNCTION FIELD EFFECTIVE TRANSISTOR AND MANUFACTURING METHOD THEREOF

摘要

PURPOSE: A junction field effect transistor and a manufacturing method thereof are provided to control the impurity diffusion to an upper and lower part of a channel layer by arranging a diffusion stop layer consisting of SiGe. CONSTITUTION: A lower epi layer(301) is formed on the top of a semiconductor substrate(300). A lower diffusion stop layer(302) is formed on the top of the lower epi layer. A channel layer(303) is formed on the top of the lower diffusion stop layer. A top diffusion stop layer(304) is formed on the top of the channel layer. A top epi layer(305) is formed on the top of the top diffusion stop layer. An isolation unit(306) is formed in the top and lower epi layer, the top, the lower diffusion stop layer and the side of the channel layer.