| 摘要 |
<p>PURPOSE: A manufacturing method of a semiconductor device is provided to prevent the wiggling of a photosensitive pattern by reducing the shock energy of an etch ion during the etching process of a reflection barrier layer. CONSTITUTION: A reflection barrier layer(12) is formed on a substrate(11). A photosensitive pattern(13) is formed on the reflection barrier layer. The photosensitive pattern which uses ArF as a light source for exposure is an ArF photosensitive pattern. The reflection barrier layer is etched with a CCP(Capacitance Coupled Plasma) generator. The reflection barrier layer is etched at the condition of 150mTorr to 200mTorr pressure, 500W or 600W top power, and 150W or 250W bottom power.</p> |
