| 摘要 |
PURPOSE: A manufacturing method of an image sensor is provided to improve the sensitivity of an image sensor by closely forming the distance between a micro lens and a photo diode after forming a trench in the metal wiring layer of a pixel part. CONSTITUTION: A circuit region(15) including a circuit is formed on a semiconductor substrate. The circuit region comprises a pixel part and a peripheral part. A metal wiring layer(100) is formed on the circuit region. A trench(25) is formed in the metal wiring layer of the pixel part. A cleaning process is executed for the metal wiring layer. A micro lens(50) is formed in the trench bottom side on the metal wiring layer.
|
