| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide an EUV (extreme ultraviolet) radiation source which has a contamination barrier to reduce a deposition rate of such as ion, atom, molecule or particle debris on a light collecting mirror and to minimize an amount of EUV radiation to be absorbed, scattered, or deflected. <P>SOLUTION: The radiation source for producing EUV or lithography of high resolution includes a plasma forming portion on which a fuel contacts with a radiation beam to produce the EUV radiation. A collector with a mirror collects the EUV radiation produced at a first focus to reflect it toward a second focus. The contamination barrier is positioned so that its surrounding portion does not close more than 50% of a solid angle specified by the mirror at the second focus, thereby, the EUV radiation is not excessively attenuated. The contamination barrier traps a fuel material such as ion from plasma, atom, molecule, or nano-small drops to prevent the deposit on the collecting mirror. A gas extraction port may be located near a plasma forming portion to control the fuel debris toward the collecting mirror and diffusion of contamination. <P>COPYRIGHT: (C)2010,JPO&INPIT |
