发明名称 |
ELECTROSTATIC DISCHARGE PROTECTION CIRCUIT |
摘要 |
PROBLEM TO BE SOLVED: To provide an electrostatic discharge protection circuit having a novel structure that is applicable to a source driver of a drive integrated circuit chip in a liquid crystal display device supporting a dot inversion scheme. SOLUTION: The electrostatic discharge protection circuit includes: a first output buffer 206A connected between a first power line and a ground line, and providing a first operating voltage to an input/output buffer; a second output buffer 206B connected between the ground line and a second power line, and providing a second operating voltage to the input/output pad; a first transfer unit 308A in which one or more diodes are connected in series between the first power line and the input/output pad; and a second transfer unit 308B in which one or more diodes are connected in series between the input/output pad and the second power line. The one or more diodes of the first transfer unit have a breakdown voltage higher than the first operating voltage and the one or more diodes of the second transfer unit have a breakdown voltage higher than the second operating voltage. COPYRIGHT: (C)2010,JPO&INPIT |
申请公布号 |
JP2010153779(A) |
申请公布日期 |
2010.07.08 |
申请号 |
JP20090193485 |
申请日期 |
2009.08.24 |
申请人 |
MAGNACHIP SEMICONDUCTOR LTD |
发明人 |
KIM SANG-KYUNG;KANG TAE KYOUNG;KIM HYOUNG-KYU |
分类号 |
H01L21/822;G09G3/20;G09G3/36;H01L21/8234;H01L27/04;H01L27/06;H01L27/088 |
主分类号 |
H01L21/822 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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