| 摘要 |
A method for fabricating a semiconductor device includes providing a substrate sequentially having a polysilicon layer and an insulating layer formed thereon; patterning the polysilicon layer and the insulating layer to form at least a gate structure on the substrate; forming lightly doped regions in the substrate respectively at two side of the gate structure; forming a spacer on a sidewall of the gate structure; forming barrier layers respectively on a top surface of the gate structure and surfaces of the substrate at two sides of the spacer, and forming a source/drain in the substrate respectively at two sides of the spacer.
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