METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

摘要

<P>PROBLEM TO BE SOLVED: To improve, especially, flatness of a surface of an epitaxial layer formed on a semiconductor substrate in a method of manufacturing a BiCMOS as a semiconductor device in which microfabrication is needed. Ž<P>SOLUTION: The method of manufacturing the BiCMOS includes: a first step of forming a hollow part 32 by etching the principal surface of a P type silicon substrate 1; a second step of forming an N+ type buried layer 2 on the P type silicon substrate 1 using a silicon oxide film 22 covering the hollow part 32 as a mask; a third step of thermally oxidizing the principal surface of the P type silicon substrate 1 including the N+ buried layer 2 to form a silicon thermal oxide film 25 including the silicon oxide film 22 on the P type silicon substrate 1; and a fourth step of forming an N type epitaxial layer on the principal surface of the P type silicon substrate 1 including the N+ buried layer 2 after removing the silicon thermal oxide film 25. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž