| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing metal dots in which density of dots can be controlled depending on the kind of a gas when a metal thin film is processed with remote plasma. SOLUTION: An SiO<SB>2</SB>film 502 is formed on a semiconductor substrate 501 made of Si (step (b)), and the metal thin film 504 is formed on the SiO<SB>2</SB>film 502 (step (c)). Then, the metal thin film 504 is processed with remote plasma generated using a gas selected out of a hydrogen gas, a helium gas, an argon gas, a nitrogen gas, an ammonium gas, a mixed gas of a hydrogen gas and a helium gas, a mixed gas of a hydrogen gas and an argon gas, and a mixed gas of a hydrogen gas and a nitrogen gas (step (d)). Consequently, the metal dots 503 are formed on the SiO<SB>2</SB>film 502 (step (e)). COPYRIGHT: (C)2010,JPO&INPIT
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