| 摘要 |
PURPOSE: A flash memory device and a method for manufacturing thereof are provided to prevent the misalignment of a common metal contact by expanding the area of a contact landing part. CONSTITUTION: An active area and a common source part are formed in a semiconductor substrate in a bit line direction through an element isolation film. A plurality of memory gates are formed in the active area. First and the second control gates are formed in the semiconductor substrate in a word line direction. A common source line(150) is formed between the first and the second control gates. A banding unit is formed at the edge of the first and the second control gates. A contact landing unit(135) is defined in the common source part through the banding unit. A common source contact(170) is formed in the contact landing unit.
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