| 摘要 |
PURPOSE: A manufacturing method of a resistivity RAM device is provided to secure the switching characteristic of the resistivity RAM device by preventing from the interfacial area between the TMO and the upper electrode diminishing due to the side etching of the upper electrode. CONSTITUTION: An insulating layer is formed on the top of a semiconductor substrate(100) equipped with a bottom electrode contact(122). The insulating layer is etched to form a hole exposing the bottom electrode contact. A bottom electrode(134a) material layer and a TMO(136a) material layer are selectively successively deposited in the bottom of the insulating layer. A top electrode material layer is deposited on the hole and the insulating layer to completely bury a hole in which the bottom electrode material and TMO material layer are formed.
|
