| 摘要 |
PURPOSE: A semiconductor device and a manufacturing method thereof are provided to protect a passivation layer from impacts in a packaging process or a wafer moving process by protecting the passivation layer with a first hard layer. CONSTITUTION: Metal layers(70,72,74) are formed on the upper side of an interlayer insulation layer formed on a semiconductor substrate. A first hard layer is formed on the upper side of the interlayer insulation layer including a metal layer. A passivation layer(90) exposes the upper side of the metal layer and is formed on the upper side of the first hard layer. A second hard layer surrounds the side and the upper side of the passivation layer. The passivation layer includes an oxide layer and a nitride layer.
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