| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device including a structure that prevents faulty joint or deficient conduction from arising between a wiring layer of a cap and a sensor, and a method for manufacturing the same. <P>SOLUTION: A second wiring layer 25 is formed on the cap 20 while a wiring 25a and a hermetic seal 25b are patterned after the wiring layer 25. A plurality of supports 27 are provided for the wiring 25a and the hermetic seal 25b, with the supports 27 being of equal height and harder than the wiring 25a and the hermetic seal 25b. Then, the respective surfaces of the wiring 25a and the hermetic seal 25b are flattened. This prevents the wiring 25a and the hermetic seal 25b from being one-sidedly planed rather than the respective supports 27, uniformly flattening the respective surfaces of the wiring 25a and the hermetic seal 25b. <P>COPYRIGHT: (C)2010,JPO&INPIT |
