| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor laser device capable of suppressing increase of contact resistance between an upper electrode and a semiconductor layer and decreasing an operational voltage of the laser element, and a method of manufacturing the same. Ž<P>SOLUTION: The semiconductor laser device has a laser structure capable of reducing the contact resistance between the upper electrode and the semiconductor layer in a semiconductor laser. In the structure, a contact protection layer is inserted on a p-type contact layer, and, by subjecting an insulating film to thermal processing after subjecting it to RIE, an opening for contact can be formed without inclusion of reactive ions in the p-type contact layer that causes the contact resistance to increase and without causing resistance of the p-type contact layer to increase by etching. Thus, the semiconductor laser device capable of suppressing the increase of the contact resistance and decreasing the operational voltage of the laser element, can be obtained. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
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