| 发明名称 |
Structure and method for reducing threshold voltage variation |
| 摘要 |
A structure comprises at least one transistor on a substrate, an insulator layer over the transistor, and an ion stopping layer over the insulator layer. The ion stopping layer comprises a portion of the insulator layer that is damaged and has either argon ion damage or nitrogen ion damage. |
| 申请公布号 |
US7750414(B2) |
申请公布日期 |
2010.07.06 |
| 申请号 |
US20080128772 |
申请日期 |
2008.05.29 |
| 申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
ZHU HUILONG;WANG YANFENG;YANG DAEWON;CHEN HUAJIE |
| 分类号 |
H01L31/062;H01L21/336 |
主分类号 |
H01L31/062 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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