发明名称 SEMICONDUCTOR MEMORY DEVICE
摘要 PURPOSE: A semiconductor memory device is provided to reduce a data transmit error due to coupling by arranging a column selection line as far as possible from a data transmit line and reducing the coupling component between the column selection line and the data transmit line. CONSTITUTION: A plurality of first signal lines are arranged in a first wiring layer. A power line(P) is arranged in the first wiring layer and is allocated to a certain number of a first signal lines(YI1~YI4). A second signal line(LI0) is arranged in a second wiring layer. The power line is arranged to be more contiguous than the first signal line which is contiguous to the second signal line of the first signal lines allocated to the power line. The first wiring layer and the second wiring layer are neighboring to each other.
申请公布号 KR20100076607(A) 申请公布日期 2010.07.06
申请号 KR20080134715 申请日期 2008.12.26
申请人 HYNIX SEMICONDUCTOR INC. 发明人 KWON, SOON HEE
分类号 H01L27/10;H01L27/04;H01L27/11 主分类号 H01L27/10
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