| 摘要 |
<p>PURPOSE: A backside illuminating image sensor and a manufacturing method thereof are provided to prevent the interference and the reflection of light due to metal routing by minimizing the stacking on a light receiving unit even though forming a photo sensing unit and a readout circuit on the same substrates. CONSTITUTION: An element isolation region(110) and a pixel region are formed on the front side of a first substrate. A light sensing part(120) and a readout circuit(130) are formed in the pixel region. An interlayer dielectric layer and a wiring are formed on the front side of the first substrate. A second substrate(200) is bonded to the front side of the first substrate on which the wiring is formed. A pixel separation ion implantation layer(115) is formed on the element isolation region of the backside of the first substrate. A micro lens(180) is formed on the light sensing part of the backside of the first substrate.</p> |
