发明名称 |
Method and device to quantify active carrier profiles in ultra-shallow semiconductor structures |
摘要 |
A method and device for determining, in a non-destructive way, at least the active carrier profile from an unknown semiconductor substrate are disclosed. In one aspect, the method comprises generating 2 m independent measurement values from the m reflected signals and correlating these 2 m measurement values with 2 m independent carrier profile values. The method further comprises generating additional 2 m measurement values to allow determining the active carrier profile and a second parameter profile by correlating the 4 m measurement values with the 4 m profile values. The method further comprises generating a total of 2 m[n.k] measurement values to allow determining [n.k] independent material parameter depth profiles, each material parameter profile having m points.
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申请公布号 |
US7751035(B2) |
申请公布日期 |
2010.07.06 |
申请号 |
US20080043906 |
申请日期 |
2008.03.06 |
申请人 |
IMEC;KATHOLIEKE UNIVERSITEIT LEUVEN |
发明人 |
CLARYSSE TRUDO;BOGDANOWICZ JANUSZ |
分类号 |
G01N23/00;G01B15/00;G01N21/00;G01N21/17;G01R31/26;H01L21/00 |
主分类号 |
G01N23/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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