| 摘要 |
A GaN semiconductor light-emitting device formed on a GaN single-crystal substrate and having a structure owing to which the current leak is less. The GaN semiconductor laser device includes p- and n-side electrodes provided on the multilayer structure and has the same structure as conventional GaN semiconductor laser devices fabricated on a sapphire substrate except that a GaN single crystal substrate is used in place of a sapphire substrate and a multilayer structure of the GaN compound semiconductor layer is formed directly on the GaN single crystal substrate without forming a GaN- ELO structure layer. The GaN single crystal substrate has continuous band-like core sections each having a width of 10 μm, and the distance between the core sections is approximately 400 μm. A laser stripe, a metal pad of a p-side electrode, and an n- side electrode are provided to the multilayer structure on the region other than the core sections. The horizontal distance Sp between the side edge of the metal pad and the edge of the core section and the horizontal distance Sn between the n-side electrode and the edge of the core section are both 95 μm.
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