METHOD FOR FORMING METAL WIRING LAYER IN SEMICONDUCTOR MEMORY DEVICE

摘要

PURPOSE: A metal wiring layer forming method of a semiconductor memory device is provided to control the increase of the contact resistance by forming a silicide on a bottom surface of a contact hole. CONSTITUTION: An inter-layer insulating film(120) is formed on a bottom conductive layer(110). A contact hole exposing a part of the bottom conductive layer is formed. A barrier layer(130) is formed on an inner wall of the contact hole. A metal layer(140a) is formed to have a constant thickness. The hard mask pattern is formed on the metal layer. A metal layer is patterned and the metal wiring layer connected with the bottom conductive layer is formed.