METHOD FOR FORMING METAL LINE IN SEMICONDUCTOR DEVICE

摘要

PURPOSE: A metal wire forming method of a semiconductor device is provided to prevent the diffusion of a metal wire and streamline processes by removing a process for manufacturing a diffusion barrier layer using a seed film. CONSTITUTION: A damascene pattern is formed in an inter-layer insulating film of the top of a semiconductor substrate(100). The diffusion of the metal wire on the surface of the damascene pattern is prevented so that a seed film(200) including ruthenium(Ru) is formed for the evaporation of a metal wire. An anneal process is performed for improving the function of the seed film. The metal wire is formed so that the damascene pattern is embedded in the seed film.