| 摘要 |
A Thin Film Transistor (TFT) reduces interconnection resistance of source/drain electrodes, prevents contamination from an active layer, reduces contact resistance between a pixel electrode and the source/drain electrodes, smoothly supplies hydrogen to the active layer and has high mobility, on-current characteristics, and threshold voltage characteristics The TFT includes an active layer having a channel region and source/drain regions, a gate electrode supplying a signal to the channel region, source/drain electrodes respectively connected to the source/drain regions and including at least one of Ti, a Ti alloy, Ta, and a Ta alloy; and an insulating layer interposed between the source/drain electrodes and the active layer and including silicon nitride.
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