发明名称 |
High electron mobility transistor having self-aligned miniature field mitigating plate on a protective dielectric layer |
摘要 |
A semiconductor device is fabricated to include source and drain contacts including an ohmic metal sunken into the barrier layer and a portion of the channel layer; a protective dielectric layer disposed between the source and drain contacts on the barrier layer; a metallization layer disposed in drain and source ohmic vias between the source contact and the protective dielectric layer and between the protective dielectric layer and the drain contact; and a metal T-gate disposed above the barrier layer including a field mitigating plate disposed on a side portion of a stem of the metal T-gate. |
申请公布号 |
US7750370(B2) |
申请公布日期 |
2010.07.06 |
申请号 |
US20070003098 |
申请日期 |
2007.12.20 |
申请人 |
NORTHROP GRUMMAN SPACE & MISSION SYSTEMS CORP. |
发明人 |
SMORCHKOVA IOULIA;COFFIE ROBERT;HEYING BEN;NAMBA CAROL;LIU PO-HSIN;HIKIN BORIS |
分类号 |
H01L29/778;H01L21/338 |
主分类号 |
H01L29/778 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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