发明名称 Working method by focused ion beam and focused ion beam working apparatus
摘要 A first working process performs a deposition working or an etching working to a workpiece by face-irradiating a focused ion beam to the workpiece, and a second working process then performs a deposition working or an etching working to the workpiece by edge-irradiating a focused ion beam to an edge of the workpiece. During the first working process, the deposition working or the etching working is performed to add the missing portion or remove the excess portion to a point slightly short of the edge boundary of the workpiece, i.e., to a point that is less than the irradiation width of the focused ion beam. The remaining missing portion or the remaining excess portion is eliminated in the second working process by edge-irradiating the focused ion beam to the edge of the workpiece.
申请公布号 US7750318(B2) 申请公布日期 2010.07.06
申请号 US20060918171 申请日期 2006.04.17
申请人 SII NANOTECHNOLOGY INC. 发明人 KOZAKAI TOMOKAZU
分类号 A61N5/00;G03F1/72;G03F1/74;G21G5/00;H01J37/305;H01J37/317 主分类号 A61N5/00
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