发明名称 Multi-component doping of copper seed layer
摘要 A method of sputtering a copper seed layer and the target used therewith. The copper included in the sputtering target includes a first dopant reactive with copper and a second dopant unreactive with copper. Examples of the first dopant include Ti, Mg, and Al. Examples of the second dopant include Pd, Sn, In, Ir, and Ag. The amount of the first dopant may be determined by testing stress migration and that of the second dopant by testing electromigration.
申请公布号 US7749361(B2) 申请公布日期 2010.07.06
申请号 US20060445690 申请日期 2006.06.02
申请人 APPLIED MATERIALS, INC. 发明人 CHEN JIE;DING PEIJUN;RENGARAJAN SURAJ;CHEN LING;VO TRAM
分类号 C23C14/34 主分类号 C23C14/34
代理机构 代理人
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