发明名称 Process, voltage and temperature control for high-speed, low-power fixed and variable gain amplifiers based on MOSFET resistors
摘要 An integrated circuit includes a first, diode-connected MOSFET and a second, linearly operated MOSFET serving as resistor. A current source may provide a current such that the second MOSFET shows a transconductance constant over temperature and process variations. In one embodiment the MOSFET devices are included in a variable gain amplifier for adjusting the gain.
申请公布号 US7750738(B2) 申请公布日期 2010.07.06
申请号 US20080274649 申请日期 2008.11.20
申请人 INFINEON TECHNOLOGIES AG 发明人 BACH ELMAR
分类号 H03G3/00 主分类号 H03G3/00
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