发明名称 |
Photoelectric conversion device, image sensor, and method of manufacturing a photoelectric conversion device |
摘要 |
Provided is a photoelectric conversion device including: a semiconductor substrate (3) of a first conductivity type; a photoelectric conversion region (7) of a second conductivity type which is located in the semiconductor substrate (3), the second conductivity type being opposite to the first conductivity type; and a buried layer (17) of the first conductivity type which is formed in an inner portion of the semiconductor substrate (3) to cover a lower side of the photoelectric conversion region (7), the buried layer (17) including a higher impurity concentration than the semiconductor substrate (3).
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申请公布号 |
US7749800(B2) |
申请公布日期 |
2010.07.06 |
申请号 |
US20070713413 |
申请日期 |
2007.03.02 |
申请人 |
SEIKO INSTRUMENTS INC. |
发明人 |
OMI TOSHIHIKO;MIMURO YOICHI |
分类号 |
H01L21/00 |
主分类号 |
H01L21/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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