METHOD OF FORMING MICRO PATTERNS FOR SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for forming the fine pattern of a semiconductor device is provided to reduce the number of mask layers by forming a photo-resist pattern and subsequently forming a hardening layer along the surface of a photo-resist pattern. CONSTITUTION: An anti-reflection layer(104) and a photo-resist pattern(106a) are formed on the upper side of a layer to be etched. A hardener is formed on the semiconductor substrate on which the photo-resist pattern is formed. A hardening layer(110a) is formed along the surface of the photo-resist pattern. A part of the hardener is eliminated to form a hardening pattern. The photo-resist pattern is eliminated. The anti-reflection layer and the layer to be etched are successively patterned along the hardening pattern.