| 摘要 |
<p>PURPOSE: A method for fabricating a non-volatile memory device is provided to suppress the formation of insulating by-products by forming a nitride film on the upper side of a gate electrode. CONSTITUTION: A gate insulating film(104), a first conductive film for a floating gate, a dielectric film, a second conductive film for a control gate, and a gate electrode film(112) are formed on a semiconductor substrate. The gate electrode film, the second conductive film, the dielectric film, the first conductive film, and the gate insulating film are etched to form a gate electrode. A nitride film(114) is formed on the sidewall and the upper side of the gate electrode through a plasma nitration method.</p> |
