METHOD FOR MANUFACTURING NANOWIRE

摘要

PURPOSE: A manufacturing method of a nanowire is provided to manufacture the single-crystal silicon nanowire using a protective layer pattern formed on the side wall of a silicon substrate, and an etching process. CONSTITUTION: A manufacturing method of a nanowire comprises the following steps: forming more than grooves on a substrate(100); forming a protective layer pattern on upper side wall of the grooves; forming a lower side wall of the grooves by etching the lower side of the grooves using the protective layer pattern as an etching mask; etching the lower side wall of the grooves; removing the protective layer pattern; and etching the substrate in between two grooves to form the nanowire(130).