| 摘要 |
PURPOSE: A method for manufacturing a complementary metal-oxide-semiconductor(CMOS) image sensor is provided to improve a dark-current property by increasing net-doping. CONSTITUTION: A gate insulating film(140) and a gate electrode are successively formed on an active region. A first dopant is implanted into the photo diode region of the active region in order to form a first conductive type first dopant region. An insulating film is formed on the sidewall of the gate electrode. A Si1-xCx epi layer(220) is formed around the gate electrode. A second dopant is implanted into the photo diode region of the active region in order to form a second conductive type second dopant region.
|
