METHOD OF FORMING A GATE IN A FLASH MEMORY DEVICE

摘要

PURPOSE: A method for forming a gate in a flash memory device is provided to suppress the charge loss of conductive films for floating gates by forming a conductive film a first floating gate and additionally depositing the other conductive film for a second floating gate. CONSTITUTION: A tunnel insulating film and a conductive film for a first floating gate(102) are formed on a semiconductor substrate. A conductive film for a second floating gate(103) is formed on the conductive film for the first floating gate. The conductive film for the second floating gate has a nano-grain size. A dielectric film and a conductive film for a control gate(106) are formed on the conductive film for the second floating gate.