| 摘要 |
PURPOSE: A method for manufacturing a nonvolatile memory device is provided to omit a cleaning process which damages an insulation layer between gates by forming a protection layer through a selective plasma nitride process. CONSTITUTION: Gates are formed on a semiconductor substrate(102). An insulation layer(114) is formed between the gates and is lower than the gates. A protection layer(116) is formed on the only upper side of the insulation layer. A metal layer is formed on the semiconductor substrate including the protection layer and the gates. The upper side of the gate is changed to the gate electrode layer by reacting with the gate in contact with the metal layer. The metal layer which is not reacted is removed.
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