| 摘要 |
PURPOSE: A method for manufacturing a semiconductor device is provided to improve the gap-filling of tungsten in a via-hole by diffusing the tungsten through a thermal process after the tungsten is deposited in the via-hole. CONSTITUTION: An insulating film(120) is formed on a semiconductor substrate(100). A via hole for exposing a semiconductor substrate through the insulating film is formed. A titanium layer and a titanium nitride(TiN) layer are successively formed on the entire surface of the insulting film with the via hole. A conductive material(160) fills the inside of the via-hole in order to form a via. A thermal process is performed with respect to the conductive material using a heater.
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