| 摘要 |
In the radiation detector of this invention, the second common electrode is formed on the incidence surface of the seat so as to cover at least a portion of the seat and the second common electrode is connected to the first common electrode. Thus, the second common electrode is bent at the periphery of the semiconductor and the seat, and a bent portion thereof is formed sharp. The first common electrode formed along the incidence surface of the semiconductor is disposed under the sharp portion of the second electrode (i.e., opposite to the incidence surface). Consequently, the common electrode seen from a bottom (opposite to the incidence surface) has a uniform shape, which avoids occurrence of irregular concentration of the electric fields. As a result, dark current due to concentration of the electric fields may be suppressed.
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