METHOD FOR FORMING PATTERN, METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE, AND MATERIAL FOR FORMING COATING LAYER OF RESIST PATTERN

摘要

Disclosed is a method for forming a pattern, wherein a pattern having a size larger than the exposure limit (resolution limit) of a current exposure light source can be formed on a surface to be processed. Also disclosed are a method for manufacturing a semiconductor device and a material for forming a coating layer of a resist pattern. Specifically disclosed is a method for forming a pattern, which is characterized by comprising a first resist pattern-forming step wherein a first resist pattern is formed, a coating layer-forming step wherein a coating layer composed of a coating material is so formed as to cover the surface of the first resist pattern, and a second resist pattern-forming step wherein a second resist pattern is formed.