摘要 |
<p>PURPOSE: A composition for forming a hard-mask layer and a manufacturing method of a patterned material using thereof are provided to improve the anti-reflection property applied to a short wavelength area and to apply a coating spin-on method. CONSTITUTION: A composition for forming a hard-mask layer contains a copolymer marked with chemical formula 1. In chemical formula 1, R1 is a substituted or non-substituted alkylene of C1~C4. R2, R3, R7, and R8 are hydrogen, a hydroxyl group, a straight, branched, or cyclic alkyl group of C1~C10, an alkoxy group, or an aryl group of C6~C20. R4, R5, and R6 are the hydrogen, the hydroxyl group, an alkyl ether group of C1~C4, a phenyl dialkylene ether group, or their combination.</p> |
申请人 |
CHEIL INDUSTRIES INC. |
发明人 |
NATALIYA TOKAREVA;NAM, IRINA;OH, CHANG IL;KIM, MIN SOO;LEE, JIN KUK;YOON, KYONG HO;HYUNG, KYUNG HEE;UH, DONG SEON;KIM, JONG SEOB |